Title :
Biomedical 3xVDD current micro-stimulator using standard 0.35um CMOS process
Author :
Tzung-Je Lee ; Hsin-Chang Chen
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Cheng Shiu Univ., Cheng Shiu, Taiwan
Abstract :
This paper proposes a 3xVDD current micro-stimulator using the 3.3 V devices in standard 0.35 μm CMOS process for the implantable biomedical application. Traditional implantable biomedical micro-stimulators suffer from the reliability and saturation problem when the high impedance electrode and tissue are driven. By using the HV (high-voltage) protection circuit, the proposed design can avoid the gate-oxide overstress and reliability problem due to the 3xVDD voltage supply. The proposed design is applied to the 3xVDD power supply voltage and provides a maximum stimulating current of 108 uA with the output voltage swing of 7.56 V for the high-impedance load of 70 kΩ. The maximum stimulating current frequency is simulated to be 100 kHz.
Keywords :
CMOS integrated circuits; bioelectric phenomena; biomedical engineering; reliability; biomedical 3xVDD current microstimulator; gate oxide overstress; high impedance electrode; high voltage protection circuit; implantable biomedical application; reliability; saturation problem; standard CMOS process; High-impedance; biomedical; micro-stimulator;
Conference_Titel :
Circuits and Systems (ICCAS), 2013 IEEE International Conference on
Conference_Location :
Kuala Lumpur
DOI :
10.1109/CircuitsAndSystems.2013.6671638