Title :
Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs
Author :
Asai, Hiroki ; Nashiyama, Isamu ; Sugimoto, Kazuya ; Shiba, Kazutoshi ; Sakaide, Yasuo ; Ishimaru, Yasuo ; Okazaki, Yasuo ; Noguchi, Keisuke ; Morimura, Tetsuro
Author_Institution :
High-Reliability Eng. & Components Corp. (HIREC), Tsukuba, Japan
Abstract :
SEB tolerance of SiC power MOSFETs against terrestrial neutrons is studied. It is shown that the failure probability increases exponentially with applied voltage and is several orders of magnitude lower than that of a Si MOSFET. The energetic secondary carbon atoms generated by the nuclear reactions and the collisions between the terrestrial neutrons and the lattice atoms of SiC devices may play important role in the SEB triggering mechanism in SiC power devices.
Keywords :
neutrons; power MOSFET; radiation hardening (electronics); silicon compounds; wide band gap semiconductors; SEB tolerance; SEB triggering mechanism; SiC; SiC devices; SiC power MOSFET; failure probability; lattice atoms; nuclear reactions; secondary carbon atoms; terrestrial neutron-induced single-event burnout; terrestrial neutrons; Insulated gate bipolar transistors; MOSFET; MOSFET circuits; Neutrons; Silicon; Silicon carbide; Insulated gate bipolar transistor (IGBT); Schottky barrier diode (SBD); power MOSFET; power device; silicon carbide (SiC); single-event burnout (SEB); spallation neutron; terrestrial neutron;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2371892
