Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

Author

Yanghui Liu ; Xiang Wan ; Li Qiang Zhu ; Yi Shi ; Qing Wan

Author_Institution

Sch. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China

Volume

35

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1257

Lastpage

1259

Abstract

Laterally coupled indium-zinc-oxide electric-double-layer (EDL) transistors gated by solution-processed sodium alginate electrolyte films are self-assembled on glass substrates. Due to the strong EDL effect, a low-operation voltage of 1.5 V, a high-current ON/OFF ratio of ~3.1 × 10⁶ and a high-electron mobility of ~8.8 cm²/Vs are obtained. Furthermore, AND logic operation is demonstrated when two in-plane gate electrodes are used as the input terminals. Such low-voltage laterally coupled oxide EDL transistors have potential applications in portable biosensors and synaptic electronics.

Keywords

electrolytes; indium compounds; self-assembly; thin film transistors; wide band gap semiconductors; zinc compounds; AND logic operation; InZnO; glass substrates; high-current ON/OFF ratio; high-electron mobility; in-plane gate electrodes; input terminals; laterally coupled dual-gate oxide-based transistors; laterally coupled indium-zinc-oxide electric-double-layer transistor; low-voltage laterally coupled oxide EDL transistors; oxide-based thin-film transistors; portable biosensors; solution-processed sodium alginate electrolyte films; synaptic electronics; voltage 1.5 V; Electron mobility; Indium compounds; Inverters; Stress; Thin film transistors; Lateral coupling; electric-double-layer; thin-film transistors; thin-film transistors.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2362143

Filename

6932466