Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

In this brief, we present a new silicon-on-insulator MESFET by using an SiGe region as a well for absorbing the holes which are generated in result of the impact ionization mechanism. The key idea in this brief is to improve the breakdown voltage and self-heating effect (SHE) by utilizing an SiGe region to decreasing the crowding of holes around the source. The well is located in the buried oxide under the channel region. Simulation results show two extra peaks created on the electric field distribution that improves the breakdown voltage. Also, the floating body effect improves due to absorbing the holes by the hole´s well and the lattice temperature decreases, so the SHE improves, too.