• DocumentCode
    6481
  • Title

    High-Q Characteristics of Variable Width Inductors With Reverse Excitation

  • Author

    Vanukuru, Venkata Narayana Rao ; Chakravorty, Anjan

  • Author_Institution
    Semicond. R&D Center, IBM India Pvt Ltd., Bangalore, India
  • Volume
    61
  • Issue
    9
  • fYear
    2014
  • fDate
    Sept. 2014
  • Firstpage
    3350
  • Lastpage
    3354
  • Abstract
    This brief proposes a technique to increase the performance of spiral inductors through appropriate selection of excitation port, especially in the case of variable width spirals. In this brief, forward excitation refers to applying ac voltage at the outer or upper terminal of the inductor with the inner or lower terminal grounded, while in reverse excitation, the inner or lower terminal is connected to the signal. Performance improvement with reverse excitation is explained using the voltage profile of the spiral. While tapered layout increased the peak-Q from 15.9 to 22.8, reverse excitation increased it further to 26.7. Moreover, reverse excitation also resulted in an increased peak-Q frequency from 5 to 8 GHz and self resonant frequency from 12 to 14.6 GHz in these tapered inductors. On the other hand, a similar approach is shown to be detrimental in the case of series stacked inductors, while symmetric inductors remain unaffected.
  • Keywords
    Q-factor; inductors; excitation port; frequency 12 GHz to 14.6 GHz; frequency 5 GHz to 8 GHz; reverse excitation; series stacked inductors; spiral inductors; Capacitance; Inductors; Metals; Radio frequency; Silicon; Spirals; Substrates; Distributed capacitance; inductance density; quality factor; reverse excitation; self-resonant frequency (SRF);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2340901
  • Filename
    6868999