Simulation features of diffusion doping process by means of software package of synopsys company

Two methods of diffusion doping process simulation are proposed. There were performed simulations of phosphor diffusion doping into p-type silicon substrates with the resistivity of ρ_v = 10 Ohm·cm and with the resistivity of ρ_v = 0.01 Ohm·cm using two methods of simulation. There were defined that results received by two different programme methods of diffusion description are almost equal.