• DocumentCode
    648527
  • Title

    Simulation features of diffusion doping process by means of software package of synopsys company

  • Author

    Lagunovich, N.L. ; Borzdov, V.M. ; Turtsevich, A.S.

  • Author_Institution
    Openly Join-Stock Co. INTEGRAL, Minsk, Belarus
  • fYear
    2013
  • fDate
    27-30 Sept. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Two methods of diffusion doping process simulation are proposed. There were performed simulations of phosphor diffusion doping into p-type silicon substrates with the resistivity of ρv = 10 Ohm·cm and with the resistivity of ρv = 0.01 Ohm·cm using two methods of simulation. There were defined that results received by two different programme methods of diffusion description are almost equal.
  • Keywords
    elemental semiconductors; materials science computing; phosphors; semiconductor doping; silicon; software packages; Si; Synopsys company; diffusion description programme methods; diffusion doping process simulation method; p-type silicon substrates; phosphor diffusion doping; resistivity; software package;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design & Test Symposium, 2013 East-West
  • Conference_Location
    Rostov-on-Don
  • Print_ISBN
    978-1-4799-2095-2
  • Type

    conf

  • DOI
    10.1109/EWDTS.2013.6673112
  • Filename
    6673112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=648527