Simulation methods of diffusion alloying process by means of taurus TSUPREM-4 programme

Two methods of diffusion alloying process simulation are proposed. There were performed simulations of phosphor diffusion alloying into p-type silicon substrates with the resistivity of ρ_v = 10 Ohm·cm and with the resistivity of ρ_v = 0.01 Ohm·cm using two methods of simulation. There were defined that results received by two different programme methods of diffusion description are almost equal.