• DocumentCode
    648590
  • Title

    Simulation methods of diffusion alloying process by means of taurus TSUPREM-4 programme

  • Author

    Lagunovich, N.L. ; Borzdov, V.M.

  • Author_Institution
    Openly Join-Stock Co. INTEGRAL, Minsk, Belarus
  • fYear
    2013
  • fDate
    27-30 Sept. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Two methods of diffusion alloying process simulation are proposed. There were performed simulations of phosphor diffusion alloying into p-type silicon substrates with the resistivity of ρv = 10 Ohm·cm and with the resistivity of ρv = 0.01 Ohm·cm using two methods of simulation. There were defined that results received by two different programme methods of diffusion description are almost equal.
  • Keywords
    alloying; diffusion; electrical resistivity; elemental semiconductors; phosphors; semiconductor process modelling; silicon; Si; Taurus TSUPREM-4 Programme; p-type silicon substrates; phosphor diffusion alloying; resistivity; simulation methods;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design & Test Symposium, 2013 East-West
  • Conference_Location
    Rostov-on-Don
  • Print_ISBN
    978-1-4799-2095-2
  • Type

    conf

  • DOI
    10.1109/EWDTS.2013.6673175
  • Filename
    6673175
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=648590