DocumentCode :
649120
Title :
Design of voltage reference with low sensitivity to process, supply voltage and temperature variations
Author :
Hande, Vinayak Gopal ; Baghini, Maryam Shojaei
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. (IIT) Bombay, Mumbai, India
fYear :
2013
fDate :
4-7 Aug. 2013
Firstpage :
89
Lastpage :
92
Abstract :
A CMOS process-insensitive voltage reference generator, which is based on the weighted sum of thermal voltage and difference of threshold voltages, is presented. The voltage reference circuit uses high VTH and regular VTH transistors and produces reference level of 422mV. The proposed technique is analyzed theoretically and its results are compared with other methods. The circuit is designed and simulated in standard 180nm mixed mode CMOS technology for low-cost low-power applications. The circuit operates at minimum supply voltage of 1V with maximum drawn current of 577nA only. A temperature coefficient of 36ppm/°C is achieved with line sensitivity of 0.01%/V. The proposed reference generator exhibits PSRR of -60.34 dB and -37.09 dB at 100Hz and 1MHz, respectively.
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; integrated circuit design; low-power electronics; radiofrequency integrated circuits; reference circuits; CMOS process-insensitive voltage reference generator; PVT; current 577 nA; frequency 1 MHz; frequency 100 Hz; low-cost low-power application; mixed mode CMOS technology; noise figure -37.09 dB; noise figure -60.34 dB; process-supply voltage-temperature; regular VTH transistor; size 180 nm; thermal voltage; threshold voltage; voltage 1 V; voltage 422 mV;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location :
Columbus, OH
ISSN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2013.6674592
Filename :
6674592
Link To Document :
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