A bandgap voltage reference in 0.18µm CMOS technology

Author

Martinez-Nieto, A. ; Sanz-Pascual, Maria Teresa ; Rosales-Quintero, P. ; Celma, S.

Author_Institution

Electron. Dept., Inst. Nac. de Astrofis., Tonantzintla, Mexico

fYear

2013

fDate

4-7 Aug. 2013

Firstpage

97

Lastpage

100

Abstract

A low-temperature coefficient, curvature-compensated CMOS bandgap voltage reference (BGR) is presented in this paper. The design was implemented in standard 0.18μm CMOS process with 1.8V power supply. The compensation is achieved generating the negative temperature coefficient (TC) voltage with a quadratic temperature dependent current biasing a bipolar transistor. In addition, the design has a 4-bit trimming circuit to compensate for process variations. The output voltage is 1.225V and shows a TC lower than 2ppm/°C over a temperature range of 160°C (-20°C to 140°C). The bandgap reference consumes 620μW and its total layout area is 217×147μm².

Keywords

CMOS integrated circuits; reference circuits; CMOS bandgap voltage reference; CMOS technology; bandgap reference; bipolar transistor; curvature compensated voltage reference; low temperature coefficient voltage reference; negative temperature coefficient voltage; power 620 muW; process variation; quadratic temperature dependent current biasing; size 0.18 mum; temperature -20 C to 140 C; trimming circuit; voltage 1.225 V; voltage 1.8 V; Bandgap reference; CTAT; PTAT; curvature correction; temperature compensation;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on

Conference_Location

Columbus, OH

ISSN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2013.6674594

Filename

6674594