Title :
Fully-integrated passive threshold-compensated PMOS rectifier for RF energy harvesting
Author :
Hameed, Zohaib ; Moez, Kambiz
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada
Abstract :
This paper presents an RF-DC rectifier for radio frequency energy harvesting applications. The proposed passive multi-stage RF-DC rectifier uses standard PMOS transistors to allow individual bulk biasing without the requirement of deep nwell technology. The RF-DC conversion circuit is based on passive threshold self-compensated topology. A design strategy to enhance the input voltage range and to optimize the power conversion efficiency is presented. Designed and simulated in IBM 130-nm CMOS technology, the proposed 915-MHz rectifier shows improved output voltage and power conversion efficiency compared to recent works. When driving a 1-MΩ load, the RF-DC power conversion unit is able to supply 1-V output with an input power of -22 dBm (6.3 μW) and obtains an efficiency of 11.4% at -16.1 dBm (24.5 μW) while supplying 2-V to the output.
Keywords :
CMOS integrated circuits; MOSFET; energy harvesting; power conversion; rectifiers; CMOS technology; PMOS transistors; RF energy harvesting; RF-DC conversion circuit; RF-DC power conversion unit; bulk biasing; design strategy; frequency 915 MHz; fully-integrated passive threshold-compensated PMOS rectifier; passive multistage RF-DC rectifier; passive threshold self-compensated topology; power 24.5 muW; power 6.3 muW; power conversion efficiency; radio frequency energy harvesting applications; resistance 1 Mohm; size 130 nm; voltage 1 V; voltage 2 V;
Conference_Titel :
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location :
Columbus, OH
DOI :
10.1109/MWSCAS.2013.6674602
