• DocumentCode
    649233
  • Title

    Modeling of transient faults and fault-tolerant design in nanoelectronics

  • Author

    Tian Ban ; Jianxin Wang ; Ting An ; Naviner, L.

  • Author_Institution
    Sch. of Electron. & Opt. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
  • fYear
    2013
  • fDate
    4-7 Aug. 2013
  • Firstpage
    545
  • Lastpage
    548
  • Abstract
    Transistors in nanometric technologies are increasingly susceptible to faults due to physical limitations. Since the constituent gates of a logic circuit actually have different failure rates, the assumption of constant gate failure rate in existing reliability evaluation and fault tolerant design is not desirable. This paper analyzes transient faults in CMOS logic gates at transistor level and proposes a mathematical model. Examples based on the benchmark circuit are provided to demonstrate the efficiency of the proposed model in both reliability evaluation and fault tolerant design.
  • Keywords
    CMOS logic circuits; MOSFET; failure analysis; fault diagnosis; fault tolerance; integrated circuit reliability; logic design; logic gates; nanoelectronics; CMOS logic gates; constant gate failure rate; fault-tolerant design; logic circuit; mathematical model; nanoelectronics; nanometric technology; reliability evaluation; transient fault modelling; transistor level;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
  • Conference_Location
    Columbus, OH
  • ISSN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2013.6674706
  • Filename
    6674706