DocumentCode
649233
Title
Modeling of transient faults and fault-tolerant design in nanoelectronics
Author
Tian Ban ; Jianxin Wang ; Ting An ; Naviner, L.
Author_Institution
Sch. of Electron. & Opt. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
fYear
2013
fDate
4-7 Aug. 2013
Firstpage
545
Lastpage
548
Abstract
Transistors in nanometric technologies are increasingly susceptible to faults due to physical limitations. Since the constituent gates of a logic circuit actually have different failure rates, the assumption of constant gate failure rate in existing reliability evaluation and fault tolerant design is not desirable. This paper analyzes transient faults in CMOS logic gates at transistor level and proposes a mathematical model. Examples based on the benchmark circuit are provided to demonstrate the efficiency of the proposed model in both reliability evaluation and fault tolerant design.
Keywords
CMOS logic circuits; MOSFET; failure analysis; fault diagnosis; fault tolerance; integrated circuit reliability; logic design; logic gates; nanoelectronics; CMOS logic gates; constant gate failure rate; fault-tolerant design; logic circuit; mathematical model; nanoelectronics; nanometric technology; reliability evaluation; transient fault modelling; transistor level;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location
Columbus, OH
ISSN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2013.6674706
Filename
6674706
Link To Document