DocumentCode
649247
Title
Review of nanoscale memristor devices as synapses in neuromorphic systems
Author
Serafino, Nathan ; Zaghloul, Mona E.
Author_Institution
Electr. & Comput. Eng. Dept., George Washington Univ., Washington, DC, USA
fYear
2013
fDate
4-7 Aug. 2013
Firstpage
602
Lastpage
603
Abstract
This paper is a review paper of a promising study towards the creation of artificial synaptic networks using memristor based synapse devices and other promising research in the field of neuromorphic circuit development. In 2010, Lu et. al utilized Ag/Si memristors incorporated into crossbar synapse networks with CMOS based pre and post synaptic neurons to effectively demonstrate that changes in both pulse height and width from CMOS neurons caused corresponding changes in memductance of memristor synapse. This proved the memristor neuromorphic circuit exhibited behavior analogous to spike timing dependant plasticity, a process which governs strength of interconnects between neurons and vital to learning and memory processes. In this paper we will present overview of the memristor device, and its applications to mimic the neurological processing.
Keywords
CMOS integrated circuits; memristors; nanoelectronics; neural chips; neurophysiology; silicon; silver; Ag-Si; CMOS based post-synaptic neuron; CMOS based presynaptic neuron; CMOS neurons; artificial synaptic networks; crossbar synapse networks; learning process; memory process; memristor neuromorphic circuit; memristor synapse memductance; nanoscale memristor device; neurological processing; neuromorphic system synapses; neuron interconnection; pulse height; synapse devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location
Columbus, OH
ISSN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2013.6674720
Filename
6674720
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