• DocumentCode
    649247
  • Title

    Review of nanoscale memristor devices as synapses in neuromorphic systems

  • Author

    Serafino, Nathan ; Zaghloul, Mona E.

  • Author_Institution
    Electr. & Comput. Eng. Dept., George Washington Univ., Washington, DC, USA
  • fYear
    2013
  • fDate
    4-7 Aug. 2013
  • Firstpage
    602
  • Lastpage
    603
  • Abstract
    This paper is a review paper of a promising study towards the creation of artificial synaptic networks using memristor based synapse devices and other promising research in the field of neuromorphic circuit development. In 2010, Lu et. al utilized Ag/Si memristors incorporated into crossbar synapse networks with CMOS based pre and post synaptic neurons to effectively demonstrate that changes in both pulse height and width from CMOS neurons caused corresponding changes in memductance of memristor synapse. This proved the memristor neuromorphic circuit exhibited behavior analogous to spike timing dependant plasticity, a process which governs strength of interconnects between neurons and vital to learning and memory processes. In this paper we will present overview of the memristor device, and its applications to mimic the neurological processing.
  • Keywords
    CMOS integrated circuits; memristors; nanoelectronics; neural chips; neurophysiology; silicon; silver; Ag-Si; CMOS based post-synaptic neuron; CMOS based presynaptic neuron; CMOS neurons; artificial synaptic networks; crossbar synapse networks; learning process; memory process; memristor neuromorphic circuit; memristor synapse memductance; nanoscale memristor device; neurological processing; neuromorphic system synapses; neuron interconnection; pulse height; synapse devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
  • Conference_Location
    Columbus, OH
  • ISSN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2013.6674720
  • Filename
    6674720