Analysis of the interface barriers between nano metal particles and semiconductors substrates

Reducing the size of metal-semiconductor (M-S) contacts to sub 20 nm results in a deviation of the interface barrier characteristics from the those predicted by the conventional theory of (M-S) contacts. This is attributed to the enhancement of the electric field at the interface due to the charge confinement in the nano metal particle. We introduce analytical analysis and finite element simulations for calculating the interface parameters. The significant electric field enhancement and the reduction of the barrier thickness account for the reversed rectification behavior compared to the conventional I-V data of M-S junctions.