Design of a fully integrated CMOS dual K- and W-band lumped wilkinson power divider

A novel design of an on-chip dual-band Wilkinson power divider (DWPD) working at 24 and 77 GHz (K- and W-band) which could be used in the automotive radar system in 65 nm CMOS technology is presented in this paper. The proposed structure is composed of two on-chip inductors and five capacitors. It has the following advantages: (1) constructing a quasi λ/4 transmission line by LC networks, the divider could operate in two frequency bands; (2) as only two inductors are needed in the design, the chip area is remarkably compact, with a die size of only 200 μm × 450 μm, and (3) the structure is symmetrical. Rigorous analysis and equations are given. With the new method, the miniaturized DWPD demonstrates an excellent performance: S₁₁, S₂₂, S₂₃ and S₃₃ are all suppressed down to -15 dB, and the insertion loss is below -1.5 dB at both frequencies.