A 11-bit Track and Hold Amplifier in 0.25 µm SiGe BiCMOS for RF sampling receivers

Author

Cannone, F. ; Avitabile, G. ; Coviello, Giuseppe

Author_Institution

Dept. of Electron. & Inf. Eng., Politec. di Bari, Bari, Italy

fYear

2013

fDate

4-7 Aug. 2013

Firstpage

792

Lastpage

795

Abstract

The paper describes a Track and Hold Amplifier (THA) suitable for RF sampling and Software Defined Radio receivers where high speed and high resolution are required. The reported THA is based on two main techniques: one for minimizing the differential droop rate and one for improving the HD3 in track mode. Measurements results show that the adopted solutions are both effective. In the desired input band around 1GHz, at the desired sub-sampling frequency (0.5GS/s) the THA provides a linearity compatible with 12-bit (Spurious Free Dynamic Range, SFDR). Moreover at the maximum achievable sampling frequency (1.5GS/s) the performances are quite constant and the resolution is compatible with 11-bit (SFDR) up to an input frequency of 1GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; amplifiers; radio receivers; sample and hold circuits; software radio; RF sampling receiver; SFDR; SiGe; SiGe BiCMOS; differential droop rate; size 0.25 micron; software defined radio receiver; spurious free dynamic range; track-and-hold amplifier; word length 11 bit;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on

Conference_Location

Columbus, OH

ISSN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2013.6674768

Filename

6674768