• DocumentCode
    649303
  • Title

    DCG-FGT transistor: Retention study of Floating Gate charge

  • Author

    Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M. ; Bouchakour, R.

  • Author_Institution
    R&D Dept., STMicroelectron., Rousset, France
  • fYear
    2013
  • fDate
    4-7 Aug. 2013
  • Firstpage
    825
  • Lastpage
    827
  • Abstract
    A Dual Control Gate Floating Gate Transistor (DCG-FGT) is a new device used in the circuit design. This component is a floating gate transistor. In this paper, we propose a retention study of floating gate charge. We demonstrate experimentally that the floating charge loss over time is very low.
  • Keywords
    electric charge; logic design; logic gates; losses; transistor circuits; DCG-FGT transistor; circuit design; dual control gate floating gate transistor; floating charge loss; floating gate charge; retention study;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
  • Conference_Location
    Columbus, OH
  • ISSN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2013.6674776
  • Filename
    6674776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=649303