Title :
DCG-FGT transistor: Retention study of Floating Gate charge
Author :
Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M. ; Bouchakour, R.
Author_Institution :
R&D Dept., STMicroelectron., Rousset, France
Abstract :
A Dual Control Gate Floating Gate Transistor (DCG-FGT) is a new device used in the circuit design. This component is a floating gate transistor. In this paper, we propose a retention study of floating gate charge. We demonstrate experimentally that the floating charge loss over time is very low.
Keywords :
electric charge; logic design; logic gates; losses; transistor circuits; DCG-FGT transistor; circuit design; dual control gate floating gate transistor; floating charge loss; floating gate charge; retention study;
Conference_Titel :
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location :
Columbus, OH
DOI :
10.1109/MWSCAS.2013.6674776
