• DocumentCode
    649371
  • Title

    A nanoscale CMOS charge pump with near perfect current matching

  • Author

    Bou-Sleiman, Sleiman ; Ismail, Mahamod

  • Author_Institution
    Analog VLSI Lab., Ohio State Univ., Columbus, OH, USA
  • fYear
    2013
  • fDate
    4-7 Aug. 2013
  • Firstpage
    1100
  • Lastpage
    1103
  • Abstract
    A drain-switching charge pump (CP) design is presented with near perfect current matching and extended flat current response over a range of process, voltage, and temperature variations. Current mismatch is compensated dynamically without the need for a replica charge pump or extended digitally-assisted calibration routines. The self-regulated circuit uses several simple yet effective feedback mechanisms to overcome the basic shortcomings of nanometer devices and reduced power supplies. The circuit is designed in 90nm CMOS and simulated extensively using Monte Carlo analysis while sweeping the operating temperature to provide statistically relevant operating conditions. The proposed design achieves near perfect current matching at output voltages between 0.16V and 0.98V for temperatures ranging from -30 to 90 degrees Celsius and a power supply between 1.08V and 1.32V.
  • Keywords
    CMOS integrated circuits; Monte Carlo methods; charge pump circuits; power supply circuits; CMOS circuit; Monte Carlo analysis; calibration routines; current mismatch; drain-switching charge pump; nanoscale CMOS charge pump; perfect current matching; power supply; replica charge pump; self-regulated circuit; size 90 nm; temperature -30 degC to 90 degC; voltage 1.08 V to 1.32 V; Charge Pump; Frequency synthesizers; Phase locked loops;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
  • Conference_Location
    Columbus, OH
  • ISSN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2013.6674844
  • Filename
    6674844