Title :
An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs
Author :
Chunlei Wu ; Ru Huang ; Qianqian Huang ; Chao Wang ; Jiaxin Wang ; Yangyuan Wang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this paper, an analytical model of the channel surface potential in the tunnel field effect transistors (TFETs) is established and verified. The dual-modulation effects in TFETs that the surface potential of the channel is alternatively controlled by the gate bias and drain bias in different operating regimes are emphasized and studied. The transition point corresponding to the switching between the two operating regimes is also analyzed quantitatively. For the first time, a closed-form analytical model of the surface potential in TFETs, including the impacts of both the gate voltage and drain voltage is proposed. Furthermore, a compact current model of the TFET-based on the derived surface potential expression is given. The model predicted tunneling current agree well with the TCAD simulation results in all operating regions of TFETs, which will be helpful for the circuit properties simulation of the TFET.
Keywords :
field effect transistors; semiconductor device models; surface potential; tunnel transistors; TCAD simulation; TFET; analytical channel surface potential model; closed-form analytical model; compact current model; drain bias; drain voltage; dual-modulation effect; gate bias; gate voltage; model predicted tunneling current; transition point; tunnel FET; tunnel field effect transistor; Analytical models; Approximation methods; Electric potential; IEEE Potentials; Junctions; Logic gates; Predictive models; Analytical model; dual-modulation effects; surface potential; tunnel field-effect transistor; tunnel field-effect transistor.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2329372