Controlling the density of CNTs by different underlayer materials in PECVD growth

Author

Liang Xu ; Di Jiang ; Yifeng Fu ; Shantung Tu ; Johan Liu

Author_Institution

Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2013

fDate

25-27 Sept. 2013

Firstpage

248

Lastpage

252

Abstract

In this paper, we present a new approach of controlling the growth density of carbon nanotubes (CNTs) by controlling the thickness of Cu underlayer. Tested thicknesses of Cu range from 5nm to 150nm. In this work, we have tried two kinds of barrier layer material, namely Mo and Al₂O₃ against the diffusion of Ni catalysts. The results suggest Al₂O₃ is a better barrier layer material and more suitable than Mo to be applied with Cu underlayer for the controlling of growth density of CNTs. In the end, this paper also gives a tentative explanation of this new method of controlling CNT growth density by adjusting the thickness of Cu underlayer.

Keywords

carbon nanotubes; catalysis; catalysts; diffusion; nanofabrication; plasma CVD; Al₂O₃; C; Mo; Ni catalysts; barrier layer material; carbon nanotubes; diffusion; growth density; plasma CVD; plasma enhanced chemical vapour deposition; size 5 nm to 150 nm; thickness testing; underlayer materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal Investigations of ICs and Systems (THERMINIC), 2013 19th International Workshop on

Conference_Location

Berlin

Print_ISBN

978-1-4799-2271-0

Type

conf

DOI

10.1109/THERMINIC.2013.6675185

Filename

6675185