DocumentCode
649510
Title
Impact of nonlinearities in boundary conditions on device compact thermal models
Author
Janicki, Marcin ; Torzewicz, T. ; Vass-Varnai, Andras ; Napieralski, A.
Author_Institution
Dept. of Microelectron. & Comput. Sci., Lodz Univ. of Technol., Lodz, Poland
fYear
2013
fDate
25-27 Sept. 2013
Firstpage
202
Lastpage
205
Abstract
This paper investigates the influence of nonlinearities in boundary conditions on thermal transients as well as their impact on the values of electronic system compact thermal model elements. The discussions in the paper are based on practical examples where thermal responses of a power device are recorded in various boundary conditions for different values of dissipated power. Then, the measurement results are analyzed using the Network Identification by Deconvolution method and the differences between particular cases are discussed in detail. The presented experimental results clearly show that the nonlinearities due to the temperature dependence of boundary conditions do have important influence on all the values of compact thermal model elements. This might suggest that in some practical cases nonlinear system identification methods should be used.
Keywords
deconvolution; power semiconductor diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; boundary conditions; device compact thermal model; dissipated power values; electronic system compact thermal model element; network identification-deconvolution method; nonlinear system identification method; power device; silicon carbide power diode; thermal responses; thermal transients;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal Investigations of ICs and Systems (THERMINIC), 2013 19th International Workshop on
Conference_Location
Berlin
Print_ISBN
978-1-4799-2271-0
Type
conf
DOI
10.1109/THERMINIC.2013.6675203
Filename
6675203
Link To Document