Title :
Self-heating of nano-scale SOI MOSFETs: TCAD and molecular dynamics simulations
Author :
Burenkov, Alex ; Belko, V. ; Lorenz, Juergen
Author_Institution :
Fraunhofer Inst. for Integrated Syst. & Device Technol., Erlangen, Germany
Abstract :
Self-heating of fully-depleted SOI MOSFETs scaled according to ITRS specifications for the year 2015 is investigated using numerical TCAD simulations and the method of molecular dynamics. The local warming-up due to self-heating of SOI-based transistors can exceed 200 K and must be considered in the simulation. Thermal properties of the few-nanometer-thin silicon layers differ significantly from those of bulk silicon. Therefore, molecular dynamics simulations were applied to quantify thermal transport in the channel of the ultra-thin-silicon body SOI transistors.
Keywords :
MOSFET; elemental semiconductors; heating; molecular dynamics method; numerical analysis; silicon; silicon-on-insulator; technology CAD (electronics); ITRS specifications; Si; few-nanometer-thin silicon layers; fully-depleted SOI MOSFET; molecular dynamics simulations; nanoscale SOI MOSFET; numerical TCAD simulations; self-heating; temperature 200 K; thermal transport; ultra-thin-silicon body SOI transistors;
Conference_Titel :
Thermal Investigations of ICs and Systems (THERMINIC), 2013 19th International Workshop on
Conference_Location :
Berlin
Print_ISBN :
978-1-4799-2271-0
DOI :
10.1109/THERMINIC.2013.6675230