Thermal conductivity measurements with the 3ω method and scanning thermal microscopy

Various techniques allow measuring the thermal conductivity of materials ranging from bulk to thin-film sizes. Among them, one can find the 3ω method, scanning thermal microscopy or Raman thermometry. The standard 3ω method is not spatially-resolved since it requires a long deposited metallic wire. It is also intrusive. In contrast, the two other techniques have spatial resolution ranging from few microns to submicronic one, depending on the conditions of operation. However, their sensitivity is altered by various parameters. For instance, scanning thermal microscopy signals depend strongly on the surface state. Here, by gathering results obtained with these techniques, we report on the comparison of the experimental determination of the thermal conductivity of various silicon-based and thermoelectric materials of strong interest for microelectronics. In particular, we highlight the evolution of the thermal conductivity with the temperature, which is customarily determined by the 3ω method. While it requires lithography, which can be considered as a drawback at first, the 3ω method is easier to use when varying the temperature. We conclude on the advantages and drawbacks of these techniques and provide a matrix of choices depending on the materials and conditions.