DocumentCode :
649983
Title :
Electrical and optical properties of in-doped ZnO thin films via ultrasonic spray pyrolysis
Author :
Biswal, R.R. ; Maldonado, Andres ; de la L Olvera, M.
Author_Institution :
Dept. de Ingeniera Electr., CINVESTAV, Mexico City, Mexico
fYear :
2013
fDate :
Sept. 30 2013-Oct. 4 2013
Firstpage :
407
Lastpage :
410
Abstract :
In-doped ZnO (IZO) thin films have been deposited onto glass substrates by the ultrasonic spray pyrolysis method. The variations of the electrical and optical properties with the indium incorporation were investigated. The optical transmittance through the films was measured in the wavelength range 300-1000 nm with the help of an UV-VIS spectrophotometer. The average optical transmittance of 3 at % indium-doped ZnO thin films was over 80% in the visible range. All the deposited films were polycrystalline in nature. The direct optical band gap value was found to be varying between 3.41 to 3.43 eV. The electrical sheet resistance values were obtained by the four probe method. The variation of substrate temperature as well as the incorporation of indium in the ZnO lattice affects the electrical resistivity.
Keywords :
II-VI semiconductors; electric resistance; electrical resistivity; energy gap; indium; optical constants; pyrolysis; semiconductor growth; semiconductor thin films; spray coating techniques; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; SiO2; UV-VIS spectrophotometer; ZnO lattice; ZnO:In; average optical transmittance; direct optical band gap; electrical property variation; electrical resistivity; electrical sheet resistance; four probe method; glass substrates; indium incorporation; indium-doped ZnO thin films; optical property variation; substrate temperature variation; ultrasonic spray pyrolysis method; wavelength 300 nm to 1000 nm; tco; ultrasonic spray pyrolysis; zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control (CCE), 2013 10th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4799-1460-9
Type :
conf
DOI :
10.1109/ICEEE.2013.6676014
Filename :
6676014
Link To Document :
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