Title :
ZnO nanowires synthesized by CSS and their application as a hydrogen gas sensor
Author :
Huerta, A.T. ; Perez-Sanchez, G.F. ; Chavez, Fernando ; Zaca-Moran, P. ; Morales-Acevedo, Arturo ; Pena-Sierra, R. ; Goiz, O. ; Cortes-Salinas, D.
Author_Institution :
Fac. of Chem. Eng., BUAP, Puebla, Mexico
fDate :
Sept. 30 2013-Oct. 4 2013
Abstract :
Zinc oxide nanowires (ZnO-NWs) were synthesized through two simple processes on silicon substrates. The first step was to obtain the zinc nanowires (Zn-NWs) by close spaced sublimation (CSS) on a quartz substrate. The second step was the transformation of Zn-NWs to ZnO-NWs by a simple thermal annealing in air environment. In the synthesis process a zinc pellet source was used as the source material, where the temperatures of the source, the temperature of the substrate, and the growth time were fixed at 350°C, 325 °C, and 5 minutes respectively, using a nitrogen environment at atmospheric pressure conditions. Afterwards, the as-prepared Zn-NWs sample was heated at 400 °C for 30 minutes in open tube conditions. In addition, a conductimetric gas sensor was fabricated using the annealed Zn-NWs based film. The sensor was tested to hydrogen at moderate temperatures (200-400 °C) for several concentrations (95-1492 ppm). The results revealed that the ZnO-NWs have a high response to hydrogen at high temperatures and high concentrations. The response and recovery times depend on the hydrogen concentration. The response time for almost all conditions is of the order of 2 minutes. These results are very promising for the development of hydrogen solid state gas sensors based on zinc oxide nanowires.
Keywords :
II-VI semiconductors; annealing; gas sensors; nanofabrication; nanosensors; nanowires; semiconductor growth; sublimation; wide band gap semiconductors; zinc compounds; CSS; H2; Si; SiO2; ZnO; air environment; atmospheric pressure conditions; close spaced sublimation; conductimetric gas sensor; hydrogen concentration; hydrogen solid state gas sensors; nitrogen environment; open tube conditions; pressure 1 atm; quartz substrate; recovery time; response time; silicon substrates; temperature 200 degC to 400 degC; thermal annealing; time 30 min; time 5 min; zinc oxide nanowires; zinc pellet source; Close Spaced Sublimation (CSS); Nanowires; Znc Oxide;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control (CCE), 2013 10th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4799-1460-9
DOI :
10.1109/ICEEE.2013.6676025