MEMS capacitive sensor using FGMOS

In this paper, a capacitance structure configured with two plates to be used as a MEMS-sensor is presented. This capacitor was designed primarily for being used in combination with a floating-gate MOS transistor (FGMOS) as the transducer device of an accelerometer. One of the plates of this capacitance structure is fixed and the other plate will move when a force is applied, causing a variable capacitance, this is achieved by a lateral comb configuration. This variable capacitance depends either on the mechanical properties of the material used in the structure, the undesired displacement caused by gravity and pull-in effect. Furthermore, the proposed design can be fabricated using standard CMOS technologies followed by a sacrificial layer etching needed for the structure release.