Title :
Optical and structural characterization of antimony doped zinc oxide single crystal
Author :
Juarez-Diaz, G. ; Pena-Sierra, R. ; Diaz-Reyes, J. ; Martinez-Juarez, J. ; Contreras-Rascon, J.
Author_Institution :
Fac. de Cienc. de la Comput., Benemerita Univ. Autonoma de Puebla, Puebla, Mexico
fDate :
Sept. 30 2013-Oct. 4 2013
Abstract :
The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000 ° C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb2O3 crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.
Keywords :
II-VI semiconductors; X-ray diffraction; antimony; oxidation; photoluminescence; vacancies (crystal); wide band gap semiconductors; zinc compounds; HRXRD; ZnO:Sb; antimony doped zinc oxide single crystal; antimony doping effect; antimony partial oxidation; atomic diffusion; emission band intensity; high resolution X-ray diffraction; optical characterization; oxygen vacancy reduction; photoluminescence; solid source; step process characterization; structural characterization; temperature 1000 degC; time 1 h; time 2 h; zinc oxide single crystal (001); antimony diffusion; high x-ray diffraction; reciprocal space maps; zinc oxide;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control (CCE), 2013 10th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4799-1460-9
DOI :
10.1109/ICEEE.2013.6676086