DocumentCode
650088
Title
1.55 µm light emitter based on dislocation D1-emission in silicon
Author
Kittler, M. ; Reiche, Manfred ; Arguirov, Tzanimir
Author_Institution
IHP Microelectron., Frankfurt (Oder), Germany
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
A new concept for light emitting diodes in silicon capable of emitting 1.55 μm is reported. It utilizes D1-band luminescence from a dislocation network in silicon. The dislocation network is created in a reproducible manner by silicon wafer direct bonding. A MOS-LED on silicon substrate and a novel two-electrode device in a thin SOI layer using p-n junctions are demonstrated. The maximum efficiency is expected to exceed 1% at room temperature.
Keywords
MIS devices; dislocations; elemental semiconductors; light emitting diodes; luminescence; p-n junctions; silicon; silicon-on-insulator; D1-band luminescence; MOS-LED; Si; direct bonding; dislocation D1-emission; dislocation network; light emitter; light emitting diodes; p-n junctions; silicon substrate; silicon wafer; temperature 293 K to 298 K; thin SOI layer; two-electrode device; wavelength 1.55 mum; 1.55 µm light emitter; D1-line; LED; SOI; dislocation network; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location
Curitiba
Print_ISBN
978-1-4799-0516-4
Type
conf
DOI
10.1109/SBMicro.2013.6676120
Filename
6676120
Link To Document