Title :
Effect of doping on the figures of merit for quantum-well infrared photodetectors based on InGaAs/InAlAs
Author :
Figueroa, B.P. ; Kawabata, R.M.S. ; Maia, A.D.B. ; Pires, M.P. ; Souza, P.L.
Author_Institution :
DISSE, Inst. Nac. de Cienc. e Tecnol. de Nanodispositivos Semicondutores, Brazil
Abstract :
InGaAs/InAlAs quantum well infrared photodetectors have been investigated as a function of doping level. It is shown that depending on the figure of merit to be optimized a different doping level is required.
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; semiconductor doping; InGaAs-InAlAs; doping effect; doping level; figure of merit; quantum well infrared photodetector; InGaAs/InAlAs quantum wells; doping; photodetector;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676123
