A novel SOI-based MOSFET with ultra-low subthreshold swing for cryogenic applications

Two-dimensional arrangements of well-controlled numbers and types of dislocations were realized in thin SOI device layers by semiconductor wafer bonding. Remarkable improvements of nMOSFET performance are obtained if the defects are positioned on well-defined locations in the channel. An increase of the drain current (I_D) was proved by one order of magnitude at room temperature. The increase of ID depends on the dislocation type. Mixed dislocations result in the highest increase of the drain current. Such MOSFETs operate also at cryogenic temperatures with excellent parameters (subthreshold swing of 21 mV/dec, etc.). Coulomb blockades related to dislocations are observed making it possible to realize single electron transistors for future cryogenic applications.