Title :
High quality TiO2 deposited by reactive sputtering. Structural and electrical peculiarities influenced by the specific experimental conditions
Author :
Libardi, J. ; Grigorov, K.G. ; Guerino, M. ; da Silva Sobrinho, A.S. ; Maciel, H.S. ; Soares, J.P. ; Massi, Marcos
Author_Institution :
Phys. Dept., Technol. Inst. of Aeronaut. (ITA), São José dos Campos, Brazil
Abstract :
Titanium dioxide (TiO2) thin films were deposited on silicon p type (100) substrates by reactive magnetron sputtering technique at different oxygen partial pressures. The film structure was studied by X-Ray Diffraction (XRD), while the film composition was examined by Rutherford Backscattering Spectroscopy (RBS). Finally, Metal-Oxide Semiconductor (MOS) capacitors were manufactured and some important physical constants were analyzed as function of the oxygen content in the films. It was found that the films deposited at lower oxygen partial pressure exhibited better crystalline structure and higher dielectric constant.
Keywords :
MIS structures; MOS capacitors; Rutherford backscattering; X-ray diffraction; aluminium; elemental semiconductors; high-k dielectric thin films; permittivity; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; sputter deposition; titanium compounds; Al-TiO2-Si-Al; MOS capacitors; MOS structures; Rutherford backscattering spectrosopy; X-ray diffraction; XRD; crystalline structure; film composition; film structure; high dielectric constant; high quality anatase titanium dioxide thin films; metal-oxide semiconductor capacitors; oxygen function; oxygen partial pressure; physical constants; reactive magnetron sputter deposition; silicon p-type (100) substrates; TiO2; dielectric constant; oxygen partial pressure;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676130
