Quantum well infrared photodetector based on a continuum localized state in a “defective” superlattice

Author

Penello, G.M. ; Degani, M.H. ; Maialle, M.Z. ; Kawabata, R.M.S. ; Micha, D.N. ; Ribeiro Andrade, R. ; Schimidt, W. ; Pires, M.P. ; Souza, P.L.

Author_Institution

Inst. de Fis., Univ. Fed. do Rio de Janeiro, Rio de Janeiro, Brazil

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

1

Lastpage

3

Abstract

We present a quantum well infrared photodetector (QWIP) based on the control of a “defect” in a superlattice. The InGaAs/InAlAs superlattice is lattice matched to an InP substrate and is composed of 11 quantum wells. The central quantum well has a different thickness from its neighbors introducing a defect in the structure. The defect energy level is controlled in a way to enhance both the oscillator strength and the carrier collection. In this work we use two different approaches to simulate the structure and we show the experimental results of the proposed structures.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; oscillators; photodetectors; semiconductor quantum wells; InGaAs-InAlAs; continuum localized state; defective superlattice; oscillator strength; quantum well infrared photodetector; substrate; QWIP; Quantum well infrared photodetector; defect state; superlattice;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2013 Symposium on

Conference_Location

Curitiba

Print_ISBN

978-1-4799-0516-4

Type

conf

DOI

10.1109/SBMicro.2013.6676132

Filename

6676132