Title :
Leakage modeling of AlHfO3.5 semi-insulating dielectrics for power devices
Author :
Christiano, V. ; Sonnenberg, Victor ; dos Santos, S.G.
Author_Institution :
LSI/PSI/EPUSP, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
Electrical characterization of hafnium aluminates gate dielectrics, using capacitance-voltage (C-V) measurements, was carried out for different frequencies. The dielectric film was deposited with equal molar concentrations of aluminum and hafnium (AlHfO3.5) in order to analyze the influence of aluminum in the AlHfOy system at high concentrations. In addition, the AlHfO3.5 film was annealed at 1000°C for 60s to simulate the thermal budget during a conventional CMOS processing. C-V measurements were performed in darkness and under illumination, having as a result a high-frequency behavior of the minority carriers already from 1kHz under illumination. Also, flat band voltage (VFB) was greater than or equal to zero for all conditions measured. On the other hand, the leakage phenomena occurring at the accumulation region, was modeled with a simplified electrical model using a leakage admittance YC whose influence was predominant at high frequencies (1MHz) in the accumulation region. Using a low frequency to obtain the accumulation capacitance without the influence of YC and knowing the physical thickness from X-ray reflectometry (XRR), the average permittivity obtained was 6.7±1.6, which is lower than the one reported for alumina (~10) and its achievement is possibly affected by the leakage process.
Keywords :
CMOS integrated circuits; aluminium compounds; capacitance measurement; dielectric materials; permittivity; voltage measurement; AlHfO3.5; CMOS processing; X-ray reflectometry; XRR; aluminum; capacitance-voltage measurement; dielectric film; electrical characterization; flat band voltage; frequency 1 kHz; hafnium aluminates gate dielectrics; high-frequency behavior; illumination; leakage admittance; leakage modeling; molar concentration; permittivity; physical thickness; power devices; semiinsulating dielectrics; temperature 1000 C; thermal budget; time 60 s; electrical characterization; hafnium aluminates; semi-insulating; tunnel diodes;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676150