Title :
Two-sided read window observed on UTBOX SOI 1T-DRAM
Author :
Nissimoff, Albert ; Sasaki, K.R.A. ; Aoulaiche, Marc ; Martino, Joao Antonio ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
LSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
This paper analyzes the read windows of decananometer UTBOX SOI 1T-DRAM memory devices focusing on the mechanisms involved as a function of the applied gate voltage during the read operation. It will be demonstrated both experimentally and by simulation that a novel two-sided read window is possible where the two main effects present, GIDL and parasitic BJT, can be effectively accounted for in two different zones.
Keywords :
DRAM chips; bipolar transistors; leakage currents; silicon-on-insulator; GIDL; decananometer UTBOX SOI 1T-DRAM memory devices; gate induced drain leakage; gate voltage; parasitic BJT; read operation; two-sided read window; 1T-FBRAM; UTBOX SOI; read window; sense margin;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676152
