• DocumentCode
    650124
  • Title

    Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias

  • Author

    Sasaki, K.R.A. ; Almeida, L.M. ; Nissimoff, Albert ; Aoulaiche, Marc ; Martino, Joao Antonio ; Simoen, Eddy ; Claeys, Cor

  • Author_Institution
    LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
  • fYear
    2013
  • fDate
    2-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper aims to analyze the band gap and the pulsed back gate bias influence on the retention time of an UTBOX SOI applied as a 1T-DRAM memory cell. This parameter is increased for higher band gap and constant whatever the pulsed back gate level during the write state. No significant difference on the retention time was observed when comparing the pulsed and constant back gate bias.
  • Keywords
    DRAM chips; silicon-on-insulator; UTBOX SOI 1T-DRAM memory cell; constant back gate bias; pulsed back gate bias influence; pulsed back gate level; retention time; semiconductor film band gap; write state; 1T-DRAM; UTBOX SOI; band gap; pulsed back gate bias; retention time;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
  • Conference_Location
    Curitiba
  • Print_ISBN
    978-1-4799-0516-4
  • Type

    conf

  • DOI
    10.1109/SBMicro.2013.6676156
  • Filename
    6676156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=650124