Title :
Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias
Author :
Sasaki, K.R.A. ; Almeida, L.M. ; Nissimoff, Albert ; Aoulaiche, Marc ; Martino, Joao Antonio ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
This paper aims to analyze the band gap and the pulsed back gate bias influence on the retention time of an UTBOX SOI applied as a 1T-DRAM memory cell. This parameter is increased for higher band gap and constant whatever the pulsed back gate level during the write state. No significant difference on the retention time was observed when comparing the pulsed and constant back gate bias.
Keywords :
DRAM chips; silicon-on-insulator; UTBOX SOI 1T-DRAM memory cell; constant back gate bias; pulsed back gate bias influence; pulsed back gate level; retention time; semiconductor film band gap; write state; 1T-DRAM; UTBOX SOI; band gap; pulsed back gate bias; retention time;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676156
