DocumentCode :
650126
Title :
Physical Characterization of TiOx layers deposited from sol-gel technique
Author :
Meneses, C. ; Sanchez, Javier ; Estrada, M. ; Pereyra, I. ; Avila-Garcia, A. ; Escobosa, A. ; Pavanello, M.
Author_Institution :
Seccion de Electron. del Estado Solido. Ing. Electr., CINVESTAV-IPN, Mexico City, Mexico
fYear :
2013
fDate :
2-6 Sept. 2013
Firstpage :
1
Lastpage :
4
Abstract :
Titanium Oxide (TiOx) is a material that can be used as optical spacer and injection/transport layer in organic devices as OLEDs and OPDs, as well as a high relative dielectric constant, (high-k), dielectric for organic thin film transistors, (OTFTs). For this last application, a low temperature and low cost deposition method of these layers using a sol-gel technique can be more adequate. Therefore, in this paper we present the physical characterization of TiOx layers deposited from a sol-gel technique, which includes the refraction index and layer thickness determination by ellipsometry, as well as XRD and FTIR spectroscopy to determine the structure and composition of the deposited layer, respectively. In addition, we compare differences in the characteristics observed in TiOx prepared by the sol-gel technique with those fabricated by reactive sputtering.
Keywords :
Fourier transform spectra; X-ray diffraction; high-k dielectric thin films; infrared spectra; inhomogeneous media; refractive index; sol-gel processing; titanium compounds; FTIR; Fourier transform infrared spectra; OLEDs; OPDs; TiOx; X-ray diffraction; XRD; deposited layer composition; dielectric thin film transistors; ellipsometry; high relative dielectric constant; high-k films; injection-transport layer; layer thickness determination; low cost deposition method; low temperature deposition method; optical spacer; organic devices; organic thin film transistors; physical characterization; reactive sputtering; refraction index; sol-gel technique; structural properties; titanium oxide layers; FTIR spectroscopy; TiOx; X-ray spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
Type :
conf
DOI :
10.1109/SBMicro.2013.6676158
Filename :
6676158
Link To Document :
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