Title :
Analytical model for potential in double-gate juntionless transistors
Author :
Cerdeira, Antonio ; Estrada, M. ; Trevisoli, R.D. ; Doria, R.T. ; de Souza, M. ; Pavanello, Marcelo Antonio
Author_Institution :
Depto. Ing. Electr., CINVESTAV-IPN, Mexico City, Mexico
Abstract :
An analytical model to calculate the potential at the surface and at the center of silicon layer for long-channel Junctionless transistors is derived and explained the basic details. The analytical model is compared with the numerical solution of the fundamental equations showing the validity of the assumptions considered.
Keywords :
MOSFET; numerical analysis; double-gate juntionless transistors; long-channel Junctionless transistors; numerical solution; Junctionless transistors; analytical calculation of potentials;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676165
