• DocumentCode
    650135
  • Title

    OCTO FinFET

  • Author

    Neto, Enrico D. ; Simoen, Eddy ; Claeys, Cor ; Gimenez, Salvador Pinillos

  • Author_Institution
    Centro Univ. da FEI, São Bernardo do Campo, Brazil
  • fYear
    2013
  • fDate
    2-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper is conceptual and introduces for the first time a new concept of structural design for FinFETs, the OCTO FinFET, which consists of an evolution of the Diamond layout style. Three-dimensional numerical simulations were performed in order to compare the performance between this new architecture and the conventional counterpart. It is shown that this layout style can significantly improve important parameters such as drain current, transconductance and on-state resistance.
  • Keywords
    MOSFET; numerical analysis; semiconductor device models; OCTO FinFET; diamond layout style; drain current; on-state resistance; structural design; three-dimensional numerical simulations; transconductance; FinFET; OCTO; TCAD simulation; modelling and simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
  • Conference_Location
    Curitiba
  • Print_ISBN
    978-1-4799-0516-4
  • Type

    conf

  • DOI
    10.1109/SBMicro.2013.6676167
  • Filename
    6676167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=650135