Non-linear behavior of Junctionless nanowire transistors operating in the linear regime

The linearity of junctionless nanowire transistors operating in the linear regime has been evaluated through experimental data and numerical simulations. The influences of the fin width, the gate bias, the temperature and the series resistance on the overall linearity have been evaluated. It is demonstrated that the increase of the series resistance improves the second order distortion and degrades the third order one.