DocumentCode :
650141
Title :
Low frequency noise in submicron Graded-Channel SOI MOSFETs
Author :
Nemer, J.P. ; de Souza, M. ; Flandre, Denis ; Pavanello, Marcelo Antonio
Author_Institution :
Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
fYear :
2013
fDate :
2-6 Sept. 2013
Firstpage :
1
Lastpage :
4
Abstract :
The origin of the low-frequency noise in submicron fully depleted Graded-Channel (GC) SOI MOSFET is investigated in terms of the channel length comparing two different technologies, OKI semiconductors and UCL.
Keywords :
MOSFET; noise; silicon-on-insulator; OKI semiconductors; UCL; channel length; low frequency noise; submicron graded-channel SOI MOSFET; SOI; graded channel; low frequency noise; submicron;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
Type :
conf
DOI :
10.1109/SBMicro.2013.6676173
Filename :
6676173
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=650141
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