Title :
Atomistic magnetoconductance effects in strained FETs
Author :
Gutierrez-D, E.A. ; Pondigo de los A, E. ; Vega-G, V.H. ; Rodriguez-R, G. ; Uribe-V, H. ; Huerta-G, O. ; Molina-R, J.
Author_Institution :
Dept. of Electron., INAOE, Puebla, Mexico
Abstract :
We introduce experimental, modeling and simulation results of the electrical performance of 28nm FETs, operated under the action of an external magnetic field B. Negative resistance and magneto-current amplification are some of the effects discussed through this research compilation done within the Microelectronics research group of the National Institute for Astrophysics, Optics and Electronics.
Keywords :
field effect transistors; integrated circuits; magnetic field effects; magnetoresistance; National Institute for Astrophysics, Optics and Electronics; atomistic magnetoconductance effects; external magnetic field; magnetocurrent amplification; microelectronics research group; negative resistance; size 28 nm; strained FET; FET; low-dimensional devices; magnetic; quantum;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676181
