DocumentCode :
650153
Title :
Potential and limitations of UTBB SOI for advanced CMOS technologies
Author :
Claeys, Cor ; Aoulaiche, Marc ; Simoen, Eddy ; Nicoletti, T. ; Dos Santos, Sara D. ; Martino, Joao Antonio
Author_Institution :
Imec, Leuven, Belgium
fYear :
2013
fDate :
2-6 Sept. 2013
Firstpage :
1
Lastpage :
6
Abstract :
UTBB (ultra-thin body and ultra-thin buried oxide) technologies are highly competitive for scaled technologies down to the 14 nm range. This paper reviews their potential for digital, analog and memory applications. Attention is also given to low frequency noise and radiation hardness aspects.
Keywords :
CMOS integrated circuits; radiation hardening (electronics); silicon-on-insulator; CMOS technology; UTBB SOI; frequency noise; radiation hardness; scaled technology; ultra-thin body technology; ultra-thin buried oxide technology; 1T-FBRAM retention time; UTBB SOI; analog applications; low-frequency noise; radiation hardness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
Type :
conf
DOI :
10.1109/SBMicro.2013.6676185
Filename :
6676185
Link To Document :
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