Title :
Studying of InSb MOS capacitors for post CMOS application
Author :
Chang, Edward Yi ; Hai-Dang Trinh ; Yueh-Chin Lin
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures.
Keywords :
CMOS integrated circuits; MOS capacitors; X-ray photoelectron spectra; aluminium compounds; annealing; electric properties; hafnium compounds; indium compounds; Al2O3; Al2O3-InSb; F-N current-voltage characteristic; Fowler-Nordheim current-voltage characteristic; HfO2-InSb; InSb; MOS capacitors; MOSCAPs; X-ray photoelectron spectroscopy spectra; annealing temperatures; band alignment; electrical properties; post CMOS application; Al2O3; CMOS; HfO2; InSb; MOSCAPs; band alignment; sub-nanometter;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676186
