DocumentCode
650371
Title
Reseach of terahertz Narrow-wall 3dB coupler on silicon-substrate
Author
Wei Wang ; Xiaozhong Shui ; Xuetian Wang
Author_Institution
Sch. of Inf. & Electron. Eng., Beijing Inst. of Technol., Beijing, China
fYear
2013
fDate
16-18 May 2013
Firstpage
586
Lastpage
588
Abstract
In this paper, a THz-band Narrow-wall 3dB coupler is designed. The 3dB coupler works in 490-510 GHz, The simulation results show that the VSWR is lower than 1.12 in the working-band. The isolation of the two input ports and two output ports is lower than -25dB, the 3dB coupler obtain slow insertion loss, the phase difference among the two output ports is 90°. Micro-electro-mechanical systems(MEMS) technology is an option for fabricating THz devices for its high fabrication precision and capability of batch production.
Keywords
directional couplers; elemental semiconductors; micromechanical devices; silicon; submillimetre wave devices; MEMS; Si; THz devices fabrication; THz-band narrow-wall 3dB coupler; VSWR; frequency 490 GHz to 510 GHz; insertion loss; micro-electro-mechanical systems; phase difference; silicon-substrate; MEMS; Narrow-wall 3dB coupler; THz;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless and Optical Communication Conference (WOCC), 2013 22nd
Conference_Location
Chongqing
Print_ISBN
978-1-4673-5697-8
Type
conf
DOI
10.1109/WOCC.2013.6676441
Filename
6676441
Link To Document