DocumentCode
6511
Title
Growth Parameters of Fully Crystallized YIG, Bi:YIG, and Ce:YIG Films With High Faraday Rotations
Author
Block, A.D. ; Dulal, P. ; Stadler, B.J.H. ; Seaton, Nicholas C. A.
Author_Institution
Dept. of Electr. Eng., Univ. of Minnesota, Minneapolis, MN, USA
Volume
6
Issue
1
fYear
2014
fDate
Feb. 2014
Firstpage
1
Lastpage
8
Abstract
We report on the growth of thin films of yttrium iron garnet (YIG) on dielectric substrates. Such films have historically been challenging to grow due to either cracking or incomplete crystallization of the films. We have established the proper growth parameters by tuning seed layer thickness to an optimum of 45 nm. These films were then used as seed layers for growth of films of Bi:YIG and Ce:YIG. Bi:YIG films show a Faraday rotation of 1700 °/cm, and Ce:YIG films show a Faraday rotation of 3700 °/cm.
Keywords
Faraday effect; bismuth; cerium; crystallisation; sputter deposition; thin films; yttrium compounds; Faraday rotations; YIG; YIG:Bi; YIG:Ce; dielectric substrates; fully crystallized thin film growth; growth parameters; seed layer thickness; size 45 nm; yttrium iron garnet; Annealing; Crystallization; Faraday effect; Films; Garnets; X-ray scattering; Faraday effect; Garnet; magneto-optics;
fLanguage
English
Journal_Title
Photonics Journal, IEEE
Publisher
ieee
ISSN
1943-0655
Type
jour
DOI
10.1109/JPHOT.2013.2293610
Filename
6678201
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