DocumentCode :
65271
Title :
CMOS Image Sensor Noise Analysis Through Noise Power Spectral Density Including Undersampling Effect Due to Readout Sequence
Author :
Martin-Gonthier, Philippe ; Magnan, Pierre
Author_Institution :
Integrated Image Sensor Lab., Univ. de Toulouse, Toulouse, France
Volume :
61
Issue :
8
fYear :
2014
fDate :
Aug. 2014
Firstpage :
2834
Lastpage :
2842
Abstract :
This paper presents a noise analysis in the frequency domain using noise power spectral density and considering the undersampling process coming from the native readout circuit sequence of image sensors. It reveals aliasing effect impacting the noise level of the image sensor. Key parameters of the undersampling process, such as sampling period, power spectral density level, and type, are explored. Low-frequency noise and particularly 1/f noise impact show a major impact in results. The new calculation algorithm is implemented in MATLAB software. Two CMOS image sensor technologies are used to perform a comparison between noise estimation and measurements. This comparison shows a very good correlation between estimations and measurements.
Keywords :
1/f noise; CMOS image sensors; integrated circuit noise; readout electronics; 1/f noise; CMOS image sensor noise analysis; MATLAB software; low-frequency noise; native readout circuit sequence; noise power spectral density; undersampling process effect; Image sensors; Integrated circuit modeling; Mathematical model; Noise; Photodiodes; Silicon compounds; Spectral analysis; APS; Aliasing; CMOS image sensors (CIS); correlated double sampling (CDS); low-frequency noise (LFN); noise power spectral density; thermal noise; undersampling; undersampling.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2329500
Filename :
6841629
Link To Document :
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