Title :
Slotted Hybrid III–V/Silicon Single-Mode Laser
Author :
Yejin Zhang ; Hailing Wang ; Hongwei Qu ; Siriguleng Zhang ; Wanhua Zheng
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
Abstract :
In this letter, a III-V/silicon hybrid single-mode laser operating at L band for photonic integrated circuits is presented. The AlGaInAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode-selection mechanism based on a slotted silicon waveguide is applied, which only needs i-line projection photolithography in the whole fabrication process. At room temperature, we obtain 0.85 and 3.5 mW output power in continuous-wave and pulse-wave regimes, respectively. The side-mode suppression ratio of larger than 25 dB is obtained from experiments.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; integrated optics; laser modes; optical fabrication; optical waveguides; photolithography; semiconductor lasers; silicon; silicon-on-insulator; AlGaInAs-Si; L band; continuous wave regime; fabrication process; gain structure; i-line projection photolithography; photonic integrated circuit; power 0.85 mW; power 3.5 mW; pulse wave regime; side mode suppression; silicon-on-insulator wafer; slotted hybrid single-mode laser; temperature 293 K to 298 K; Distributed feedback devices; Laser feedback; Lithography; Optical waveguides; Semiconductor lasers; Silicon; Waveguide lasers; Hybrid silicon laser; photonic integrated circuits; side-mode suppression ratio; single-mode laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2248082
