Title :
Ultrafast AC–DC NBTI Characterization of Deep IL Scaled HKMG p-MOSFETs
Author :
Goel, Nishith ; Nanaware, N. ; Mahapatra, Santanu
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai, India
Abstract :
Ultrafast DC and AC negative bias temperature instability (NBTI) measurements are done in high-k metal gate p-MOSFETs having deeply scaled interlayer. Time evolution of degradation during and after DC and AC stress at different duty cycle and frequency are characterized. Impact of last pulse cycle duration (half or full) and pulse low bias on AC stress are studied. Equivalence of measured data from large and small area devices are shown. Experimental results are qualitatively explained using known NBTI physical mechanism.
Keywords :
AC-DC power convertors; high-k dielectric thin films; negative bias temperature instability; power MOSFET; semiconductor device measurement; stress effects; AC stress; DC stress; NBTI measurements; deep IL scaled HKMG p-MOSFET; deeply scaled interlayer; degradation time evolution; duty cycle; high-k metal gate p-MOSFET; negative bias temperature instability; pulse cycle duration; pulse low bias; ultrafast AC-DC NBTI characterization; High K dielectric materials; MOSFET; Negative bias temperature instability; Stress; Stress measurement; Temperature measurement; AC duty cycle; AC frequency; AC stress; DC stress; high-k metal gate (HKMG); negative bias temperature instability (NBTI); recovery; ultrafast measurements (UFMs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2284668
