Ultrafast AC–DC NBTI Characterization of Deep IL Scaled HKMG p-MOSFETs

Author

Goel, Nishith ; Nanaware, N. ; Mahapatra, Santanu

Author_Institution

Dept. of Electr. Eng., IIT Bombay, Mumbai, India

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1476

Lastpage

1478

Abstract

Ultrafast DC and AC negative bias temperature instability (NBTI) measurements are done in high-k metal gate p-MOSFETs having deeply scaled interlayer. Time evolution of degradation during and after DC and AC stress at different duty cycle and frequency are characterized. Impact of last pulse cycle duration (half or full) and pulse low bias on AC stress are studied. Equivalence of measured data from large and small area devices are shown. Experimental results are qualitatively explained using known NBTI physical mechanism.

Keywords

AC-DC power convertors; high-k dielectric thin films; negative bias temperature instability; power MOSFET; semiconductor device measurement; stress effects; AC stress; DC stress; NBTI measurements; deep IL scaled HKMG p-MOSFET; deeply scaled interlayer; degradation time evolution; duty cycle; high-k metal gate p-MOSFET; negative bias temperature instability; pulse cycle duration; pulse low bias; ultrafast AC-DC NBTI characterization; High K dielectric materials; MOSFET; Negative bias temperature instability; Stress; Stress measurement; Temperature measurement; AC duty cycle; AC frequency; AC stress; DC stress; high-k metal gate (HKMG); negative bias temperature instability (NBTI); recovery; ultrafast measurements (UFMs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2284668

Filename

6646214