DocumentCode :
65442
Title :
Author :
Yuchen Du ; Lingming Yang ; Jingyun Zhang ; Han Liu ; Majumdar, Kausik ; Kirsch, Paul D. ; Ye, Peide D.
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
Volume :
35
Issue :
5
fYear :
2014
fDate :
May-14
Firstpage :
599
Lastpage :
601
Abstract :
For the first time, n-type few-layer MoS2 field-effect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-μm gate length with an ON-OFF current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in ON-resistance and a 3.3 times improvement in contact resistance with heterocontacts compared with the MoS2 FETs without graphene contact layer. Temperature-dependent study on MoS2/graphene heterocontacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene/metal heterocontacts structure.
Keywords :
Schottky barriers; contact resistance; field effect transistors; graphene; molybdenum compounds; titanium; FET; MoS2; ON-OFF current ratio; ON-resistance; Schottky barrier height; Schottky contact nature; Ti; contact resistance; devised I-V method; electrical characteristic enhancement; graphene-metal heterocontacts structure; n-type few-layer field-effect transistors; size 1 mum; temperature-dependent study; transfer length method; Contact resistance; Field effect transistors; Graphene; Metals; Schottky barriers; Temperature measurement; ${rm MoS}_{2}$; MOSFET; MoS₂; Schottky barrier height; Schottky barrier height.; graphene; heterocontacts;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2313340
Filename :
6783768
Link To Document :
