Analytical Modeling of IGBTs: Challenges and Solutions

Author

Baliga, B. Jayant

Author_Institution

Dept. Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

60

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

535

Lastpage

543

Abstract

With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical simulation tools. However, analytical modeling of IGBTs allows a deeper understanding of the physics of operation, which can foster innovation. This paper reviews 1-D analytical models developed for the IGBT on-state characteristics, switching behavior, and safe operating area for symmetric (nonpunchthrough) and asymmetric (punchthrough) devices.

Keywords

insulated gate bipolar transistors; numerical analysis; semiconductor device models; 2D numerical simulation tools; 3D numerical simulation tools; IGBT analytical modeling; IGBT on-state characteristics; asymmetric devices; insulated-gate bipolar transistor design; switching behavior; symmetric devices; Analytical models; Buffer layers; Current density; Doping; Insulated gate bipolar transistors; Junctions; Transistors; Blocking; insulated-gate bipolar transistor (IGBT); modeling; on state; safe operating area; silicon carbide; switching;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2222415

Filename

6343228