Title :
A V-band 8.5Gbps transmitter in 65nm CMOS
Author :
Rubin, Anat ; Socher, Eran
Author_Institution :
Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel
Abstract :
A wideband 8.5 Gbps transmitter implemented using a 65 nm CMOS technology in V-band (50GHz-75 GHz) is presented. A BPSK modulation scheme is used, realized by a double balanced Gilbert cell, followed by an output buffer and a matching network. Output power of 5.5 dBm-7.2 dBm was achieved at carrier frequencies of 56GHz-68 GHz. Limited by measurement equipment, BER<;10-12 was achieved for carrier frequencies at the entire V-band with data rates of up to 8.5 Gbps. The design consummes 65 mW and takes up a core area of 225*325 μm2.
Keywords :
CMOS analogue integrated circuits; error statistics; field effect MIMIC; phase shift keying; radio transmitters; BER; BPSK modulation; CMOS technology; V-band transmitter; bit rate 8.5 Gbit/s; double balanced Gilbert cell; frequency 50 GHz to 75 GHz; matching network; output buffer; power 65 mW; size 65 nm; wideband transmitter; Binary phase shift keying; Bit error rate; CMOS integrated circuits; CMOS technology; Frequency measurement; Mixers; Transmitters; Active Mixer; BER; BPSK; CMOS; Gilbert; Transmitter; V-band;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on
Conference_Location :
Tel Aviv
DOI :
10.1109/COMCAS.2013.6685274
